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LNA500M8GR Datasheet
One side (where you will mount the RF modules) of PCB is plated with Electroless Nickel Immersion Gold (ENIG) for superior electrical conductivity
High "Q" resonator based design
3Fo Isolation >20 dBc @ Fout = 20 GHz
Listed pictures include Product Picture and S Parameter from 1G to 6GHz
Low Noise Amplifier 1.4dB NF 2~18GHz 20dB Gain 13dBm P1dB SMA NF_0.9dB LNA500M8GR DatasheetPart Number: LNA2G18G is a broadband, low noise amplifier with 20 dB typical gain from 2 to 18 GHz in a small 15 16x15 16x0. 59 shielded RF enclosure (PN: 6UDD2W6S1A2). Third order linearity (OIP3) is typically 23 dBm and reverse isolation is >35dB. Proudly Made in USA by Lotus Communication Systems, INC. in Massachusetts. Features Frequency Range: 2GHz to 18GHz Noise Figure: typical 1. 4dB @ 10 GHz Gain: typical 20B @ 10 GHz Output P1dB: 13 dBm
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