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200A IGBT power module engineered for rugged
Low saturation voltage (VCE(sat)) minimizes conduction losses and reduces thermal stress during continuous switching operation
Whether you need a single replacement module or volume quantity for a production run
enabling immediate repair
The SKD51/16 is widely used across a broad range of industrial and commercial applications
MG200Q2YS11-TOSHIBA First 50 200A IGBT power module engineeredThe Toshiba MG200Q2YS11 is a high performance 1200V, 200A IGBT power module engineered for rugged, high frequency switching in industrial power conversion systems. Built to Toshiba's established Q series design standards, this module integrates fast switching IGBT chips with a co packaged freewheeling diode in a robust isolated base package. Its low saturation voltage (VCE(sat)) and optimized gate characteristics make it well suited for applications
