MG200Q2YS51-TOSHIBA First 50 Housed in a dual (half-bridge

Housed in a dual (half-bridge capable) configuration

Part Number SKM200GB123D Manufacturer SEMIKRON Type IGBT Module Current Rating 200A Voltage Rating 1200V Availability In Stock Condition New / Factory Original Key Features:

This module is built to withstand the rigors of continuous industrial operation and is an ideal solution for engineers and procurement specialists seeking dependable power control components

Part Number 2MBI300S-120 Manufacturer Fuji Electric Type IGBT Module Configuration Dual Current Rating 300A Voltage Rating 1200V Availability In Stock — Same-Day Shipping Condition New OEM Key Features of the 2MBI300S-120:

Its 600V blocking voltage and 600A current capacity address the medium-to-high power range common in three-phase drive platforms and regenerative converter topologies

MG200Q2YS51-TOSHIBA First 50 Housed in a dual (half-bridgeThe Toshiba MG200Q2YS51 is a high current IGBT power module engineered for use in high frequency switching topologies where thermal reliability and consistent gate drive response are critical. Rated at 200A, this module is constructed to Toshiba's established quality benchmarks and is well suited for integration into variable frequency drives, industrial inverters, and medium to large servo amplifier platforms. Its robust internal layout supports low