Hypertec 512MB PC2-4200 (Legacy) memory module 0.5 GB 1 x 0.5 GB DDR2 533 MHz DDR3 2 V Design Backlight No

2 V Design Backlight No Technical details Chips organisation 1Rx8 Memory Buffered memory type Registered (buffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for Server Memory form factor 288-pin DIMM CAS latency 19 Memory voltage 1

Memory Buffered memory type Registered (buffered) Internal memory 32 GB Memory form factor 288-pin DIMM ECC Yes Memory clock speed 2400 MHz Internal memory type DDR4 Features Buffered memory type Registered (buffered) Internal memory 32 GB Memory form factor 288-pin DIMM ECC Yes Memory clock speed 2400 MHz Internal memory type DDR4

Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Component for Laptop Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1600 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Component for Laptop Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1600 MHz Internal memory type DDR3

Ready for AMD Ryzen™

Memory Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3

Hypertec 512MB PC2-4200 (Legacy) memory module 0.5 GB 1 x 0.5 GB DDR2 533 MHz DDR3 2 V Design Backlight NoA Hypertec Legacy Memory Module is a module that uses no current DRAM technology and is no longer in mainstream production by OEMS and or third party suppliers. Hypertec are committed to providing a full memory upgrade landscape as part of our core product offering and as such, there may be occasions where we need to utilise professionally repurposed components. Any repurposed components are removed within a full ESD environment and then used to