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30A IGBT module engineered for precision switching performance in medium-power industrial applications
Its 800V blocking voltage provides adequate margin for 400–480VAC line inputs with transient headroom
Designed to Mitsubishi's rigorous quality standards
This module combines IGBT power switches with integrated gate drive electronics
new SEMIKRON product
FZ800R12KL4C-INFINEON Desc 30A IGBT module engineered forThe Infineon FZ800R12KL4C is a high current, half bridge IGBT module rated for 800A continuous collector current and 1200V blocking voltage. Built on Infineon's proven KL4 platform, this module integrates IGBT chips with antiparallel freewheeling diodes in a robust, low inductance housing engineered for efficiency and long service life. Its optimized gate characteristics and low VCE(sat) make it a preferred choice in high power conversion systems
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