Gate Deposition Mask, High Density Design Type:Gate Deposition Mask - Interdigitated Channel HD OFETs m – 10 kΩ

m – 10 kΩ

5-dithia-s-indacen-2-yl]-9-(3-dimethylamino-propyl)-7-methyl-9H-fluoren-9-yl]-propyl}-dimethylamine (PBN)

*Photos include both Original and Plus models

600 cd/m2 Max

PhysRe Lett

Gate Deposition Mask, High Density Design Type:Gate Deposition Mask - Interdigitated Channel HD OFETs m – 10 kΩHigh Density Gate Deposition Mask Enabling accurate deposition resolution An evaporation mask for deposition of gate contacts, for use with the high density OFET system. A 100 m standoff spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution. Mask with direct contact (no spacer): For sputtering and other non directional deposition systems, as well as for thermal deposition systems with oblique angles